Article (Scientific journals)
Enantiopure Dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophenes: Reaching High Magnetoresistance Effect in OFETs.
Volpi, Martina; Jouclas, Rémy; Liu, Jie et al.
2023In Advanced Science, 10 (26), p. 2301914
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Keywords :
chiral induced spin selectivity effect; chirality; magnetoresistance; organic semiconductors; spin; transistors; Chiral molecule; Enantiopure; External magnetic field; Magnetic contacts; Magnetoresistance effects; Organic field-effect transistors; Selectivity effects; Spin filters; Medicine (miscellaneous); Chemical Engineering (all); Materials Science (all); Biochemistry, Genetics and Molecular Biology (miscellaneous); Engineering (all); Physics and Astronomy (all); General Physics and Astronomy; General Engineering; General Materials Science; General Chemical Engineering
Abstract :
[en] Chiral molecules are known to behave as spin filters due to the chiral induced spin selectivity (CISS) effect. Chirality can be implemented in molecular semiconductors in order to study the role of the CISS effect in charge transport and to find new materials for spintronic applications. In this study, the design and synthesis of a new class of enantiopure chiral organic semiconductors based on the well-known dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) core functionalized with chiral alkyl side chains is presented. When introduced in an organic field-effect transistor (OFET) with magnetic contacts, the two enantiomers, (R)-DNTT and (S)-DNTT, show an opposite behavior with respect to the relative direction of the magnetization of the contacts, oriented by an external magnetic field. Each enantiomer displays an unexpectedly high magnetoresistance over one preferred orientation of the spin current injected from the magnetic contacts. The result is the first reported OFET in which the current can be switched on and off upon inversion of the direction of the applied external magnetic field. This work contributes to the general understanding of the CISS effect and opens new avenues for the introduction of organic materials in spintronic devices.
Disciplines :
Chemistry
Author, co-author :
Volpi, Martina ;  Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, Bruxelles, 1050, Belgium
Jouclas, Rémy;  Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, Bruxelles, 1050, Belgium
Liu, Jie;  Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, Bruxelles, 1050, Belgium
Liu, Guangfeng;  Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, Bruxelles, 1050, Belgium
Catalano, Luca;  Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, Bruxelles, 1050, Belgium
Mcintosh, Nemo ;  Université de Mons - UMONS > Faculté des Science > Service de Chimie des matériaux nouveaux
Bardini, Marco  ;  Université de Mons - UMONS > Faculté des Science > Service de Chimie des matériaux nouveaux
Gatsios, Christos;  Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany ; Institut für Physik and IRIS Adlershof, Humboldt-Universitat zu Berlin, 12489, Berlin, Germany
Modesti, Federico;  BASF SE, RGD - J542S, 67056, Ludwigshafen am Rhein, Germany
Turetta, Nicholas;  CNRS, University of Strasbourg, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
Beljonne, David ;  Université de Mons - UMONS > Faculté des Science > Service de Chimie des matériaux nouveaux
Cornil, Jérôme;  Laboratory for Chemistry of Novel Materials, Center for Research in Molecular Electronics and Photonics, University of Mons, Place du Parc 23, Mons, B-7000, Belgium
Kennedy, Alan R;  Department of Pure and Applied Chemistry, University of Strathclyde, Cathedral Street 295, Glasgow, G1 1XL, UK
Koch, Norbert;  Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489, Berlin, Germany ; Institut für Physik and IRIS Adlershof, Humboldt-Universitat zu Berlin, 12489, Berlin, Germany
Erk, Peter;  BASF SE, RGD - J542S, 67056, Ludwigshafen am Rhein, Germany
Samorì, Paolo;  CNRS, University of Strasbourg, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
Schweicher, Guillaume;  Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, Bruxelles, 1050, Belgium
Geerts, Yves ;  Université de Mons - UMONS ; Laboratoire de Chimie des Polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 206/01, Bruxelles, 1050, Belgium ; International Solvay Institutes for Physics and Chemistry, Université Libre de Bruxelles (ULB), Boulevard du Triomphe, CP 231, Bruxelles, 1050, Belgium
More authors (8 more) Less
Language :
English
Title :
Enantiopure Dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophenes: Reaching High Magnetoresistance Effect in OFETs.
Publication date :
September 2023
Journal title :
Advanced Science
eISSN :
2198-3844
Publisher :
John Wiley and Sons Inc, Germany
Volume :
10
Issue :
26
Pages :
e2301914
Peer reviewed :
Peer Reviewed verified by ORBi
Research unit :
S817 - Chimie des matériaux nouveaux
Research institute :
R400 - Institut de Recherche en Science et Ingénierie des Matériaux
Complexys
Funding text :
This work has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Sklodowska‐Curie grant nos. 811284 and 801505. Y. G. is thankful to the Belgian National Fund for Scientific Research (FNRS) for financial support through research projects the Pi‐Fast (No T.0072.18), the Pi‐Chir (No T.0094.22), the POLYP (40003001), DIFFRA (No U.G001.19), 2D to 3D (No 30489208), and CHISUB (No 40007495). Financial support from the Fédération Wallonie‐Bruxelles (ARC No. 20061) is also acknowledged. G. S. is a FNRS Research Associate. G.S. acknowledges financial support from the Francqui Foundation (Francqui Start‐Up Grant). G.S. thanks the FNRS for financial support through research project COHERENCE2 (N°F.4536.23). J.C. and D.B. are FNRS research fellows.This work has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant nos. 811284 and 801505. Y. G. is thankful to the Belgian National Fund for Scientific Research (FNRS) for financial support through research projects the Pi-Fast (No T.0072.18), the Pi-Chir (No T.0094.22), the POLYP (40003001), DIFFRA (No U.G001.19), 2D to 3D (No 30489208), and CHISUB (No 40007495). Financial support from the Fédération Wallonie-Bruxelles (ARC No. 20061) is also acknowledged. G. S. is a FNRS Research Associate. G.S. acknowledges financial support from the Francqui Foundation (Francqui Start-Up Grant). G.S. thanks the FNRS for financial support through research project COHERENCE2 (N°F.4536.23). J.C. and D.B. are FNRS research fellows.
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