Stability of Metal Oxide Semiconductor Gas Sensors: A Review

gas sensor; metal oxide; Semiconductor; stability; Data collection; Electronic information; Environmental Monitoring; Exhaled breaths; Gas detection; Gas-sensors; Information age; Long term stability; Metal oxide semiconductor gas sensors; Stability criterions; Instrumentation; Electrical and Electronic Engineering

Abstract :

[en] Sensor stability is defined as the ability to maintain a relatively stable and repeatable signal over a sufficient period. Long-term stability for gas sensors is an essential capability for carrying out long-term data collection of human exhaled breath, environmental monitoring and other gas detection in the modern electronic information age. This article reviews the research advances on the stability of metal oxide semiconductor gas sensors in the past five years. The impact of structure, environment, toxicity and sensor array on the sensor stability are discussed. Then, the improvement schemes of existing materials and structure design are summarized. The achievements of structure doping, humidity, anti-poisoning and photoactivation are overviewed. Finally, the great significance of elucidating the sensing mechanism and carrying out the life acceleration test for future research and development is pointed out.

Research center :

CRIM - Ingénierie des matériaux

Disciplines :

Materials science & engineering

Author, co-author :

Chai, Hongfeng; College of Mechanical Engineering, Yangzhou University, Yangzhou, China

Zheng, Zichen; College of Mechanical Engineering, Yangzhou University, Yangzhou, China

Liu, Kewei; College of Mechanical Engineering, Yangzhou University, Yangzhou, China

Xu, Jinyong; College of Mechanical Engineering, Yangzhou University, Yangzhou, China

Wu, Kaidi; College of Mechanical Engineering, Yangzhou University, Yangzhou, China

Luo, Yifan ; Université de Mons - UMONS > Faculté Polytechnique > Service de Science des Matériaux ; College of Mechanical Engineering, Yangzhou University, Yangzhou, China

Liao, Hanlin; ICB UMR 6303, CNRS, University Bourgogne Franche-Comté, University of Technology of Belfort-Montbéliard (UTBM), Belfort, France

Debliquy, Marc ; Université de Mons - UMONS

Zhang, Chao ; College of Mechanical Engineering, Yangzhou University, Yangzhou, China

Language :

English

Title :

Stability of Metal Oxide Semiconductor Gas Sensors: A Review

Publication date :

15 March 2022

Journal title :

IEEE Sensors Journal

ISSN :

1558-1748

Publisher :

Institute of Electrical and Electronics Engineers Inc.

Volume :

Issue :

Pages :

5470 - 5481

Peer reviewed :

Peer Reviewed verified by ORBi

Additional URL :

http://xplorestaging.ieee.org/ielx7/7361/9733818/09718073.pdf?arnumber=9718073

Research unit :

F502 - Science des Matériaux

Research institute :

Research Institute for Materials Science and Engineering

Funders :

National Key Research and Development Program of China
National Natural Science Foundation of China
Practice Innovation Plan of Graduate Education Innovation Project in Jiangsu Province
Outstanding Youth Foundation of Jiangsu Province of China

Available on ORBi UMONS :

since 20 August 2022

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