Article (Scientific journals)
Pathways for Photoinduced Charge Generation and Recombination at Donor-Acceptor Heterojunctions: The Case of Oligophenylenevinylene-Perylene Bisimide Complexes
Burquel, A.; Lemaur, Vincent; Beljonne, David et al.
2006In Journal of Physical Chemistry. A, 110 (10), p. 3447-3453
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Abstract :
[en] Semiempirical Hartree-Fock techniques have been applied to assess the molecular parameters governing the efficiency of photoinduced charge generation and recombination processes in donor/acceptor complexes involving a three-ring oligophenylenevinylene as donor and perylene bisimide as acceptor. The corresponding rates have been estimated in the framework of the Marcus-Levich-Jortner formalism for different geometries of the complexes. The results indicate that dissociation pathways involving the lowest two charge transfer excited states contribute significantly to the dynamics of the whole process. The rates are found to be strongly sensitive to the relative position of the donor and acceptor units and can be rationalized in terms of symmetry arguments applied to relevant electronic levels.
Disciplines :
Chemistry
Physics
Author, co-author :
Burquel, A.
Lemaur, Vincent  ;  Université de Mons > Faculté des Sciences > Chimie des matériaux nouveaux
Beljonne, David ;  Université de Mons > Faculté des Sciences > Chimie des matériaux nouveaux
Lazzaroni, Roberto ;  Université de Mons > Faculté des Sciences > Service de Chimie des matériaux nouveaux
Cornil, Jérôme 
Language :
English
Title :
Pathways for Photoinduced Charge Generation and Recombination at Donor-Acceptor Heterojunctions: The Case of Oligophenylenevinylene-Perylene Bisimide Complexes
Publication date :
16 March 2006
Journal title :
Journal of Physical Chemistry. A
ISSN :
1089-5639
eISSN :
1520-5215
Publisher :
American Chemical Society, Washington, United States - District of Columbia
Volume :
110
Issue :
10
Pages :
3447-3453
Peer reviewed :
Peer Reviewed verified by ORBi
Research unit :
S817 - Chimie des matériaux nouveaux
Research institute :
R400 - Institut de Recherche en Science et Ingénierie des Matériaux
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