Influence of PVT Variation and Threshold Selection on OBT and OBIST Fault Detection in RFCMOS Amplifiers

Nel, Hendrik P.; Dualibe, Fortunato; Stander, Tinus

doi:10.1109/ojcas.2022.3232638

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Influence of PVT Variation and Threshold Selection on OBT and OBIST Fault Detection in RFCMOS Amplifiers

Nel, Hendrik P.; Dualibe, Fortunato; Stander, Tinus

2023 • In IEEE Open Journal of Circuits and Systems, 4, p. 70-84

Peer reviewed

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https://hdl.handle.net/20.500.12907/47391

DOI
10.1109/ojcas.2022.3232638

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Influence_of_PVT_Variation_and_Threshold_Selection_on_OBT_and_OBIST_Fault_Detection_in_RFCMOS_Amplifiers.pdf

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Keywords :

Built-in self-test, circuit simulation, CMOS, design for testability, LNA, microwave integrated circuits, oscillation-based testing, PVT.

Abstract :

[en] Oscillation-based testing (OBT) and Oscillation-based built-in self-testing (OBIST) circuits enable detection of catastrophic faults in analogue and RF circuits, but both are sensitive to process, voltageand temperature (PVT) variation. This paper investigates 15 OBT and OBIST feature extraction strategies,and four approaches to threshold selection, by calculating figure-of-merit (FoM) across PVT variation. This is done using a 2.4 GHz LNA in 0.35 μm CMOS as DUT. Of the 15 feature extraction approaches, the OBT approaches are found more effective, with some benefit gained from switched-state detection. Of the four approaches to threshold selection (nominal-ranged static thresholds, extreme-range static thresholds, temperature dynamic thresholds, and simple noise-filtered tone detection), dynamic thresholds resulted in the highest average FoM of 0.919, with the best FoM of 0.952, with a corresponding probability of test escape P(TE) and yield loss P(YL) of 5·10-2 and 1.89·10-2 respectively but requires accurate temperature measurement. Extreme static threshold selection resulted in a comparable average FoM of 0.912, but with less susceptibility to process variation and without the need for temperature measurement. Binary detection of a noise-filtered oscillating tone is found the least complex approach, with an average FoM of 0.891.

Disciplines :

Electrical & electronics engineering

Author, co-author :

Nel, Hendrik P. ; Department for Electrical, Electronic and Computer Engineering, Carl and Emily Fuchs Institute for Microelectronics, University of Pretoria, Pretoria, South Africa

Dualibe, Fortunato ; Université de Mons - UMONS > Faculté Polytechniqu > Service d'Electronique et Microélectronique

Stander, Tinus ; Department for Electrical, Electronic and Computer Engineering, Carl and Emily Fuchs Institute for Microelectronics, University of Pretoria, Pretoria, South Africa

Language :

English

Title :

Influence of PVT Variation and Threshold Selection on OBT and OBIST Fault Detection in RFCMOS Amplifiers

Publication date :

02 March 2023

Journal title :

IEEE Open Journal of Circuits and Systems

ISSN :

2644-1225

Publisher :

Institute of Electrical and Electronics Engineers (IEEE)

Volume :

Pages :

70-84

Peer reviewed :

Peer reviewed

Additional URL :

http://xplorestaging.ieee.org/ielx7/8784029/10019301/10002329.pdf?arnumber=10002329

Research unit :

Electronics and Microelectronics

Research institute :

Numediart

Funders :

NRF/F.RS.-FNRS South Africa—Wallonia Joint Science and Technology Research Collaboration
NRF

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